330a inverter grade thyristors hockey puk version st173c..c series 1 bulletin i25180 rev. b 04/00 www.irf.com typical applications inverters choppers induction heating all types of force-commutated converters features metal case with ceramic insulator international standard case to-200ab (a-puk) all diffused design center amplifying gate guaranteed high dv/dt guaranteed high di/dt high surge current capability low thermal impedance high speed performance case style to-200ab (a-puk) i t(av) 330 a @ t hs 55 c i t(rms) 610 a @ t hs 25 c i tsm @ 50hz 4680 a @ 60hz 4900 a i 2 t@ 50hz 110 ka 2 s @ 60hz 100 ka 2 s v drm /v rrm 1000 to1200 v t q range 15 to 30 s t j - 40 to 125 c major ratings and characteristics parameters st173c..c units
st173c..c series 2 bulletin i25180 rev. b 04/00 www.irf.com voltage v drm /v rrm , maximum v rsm , maximum i drm /i rrm max. type number code repetitive peak voltage non-repetitive peak voltage @ t j = t j max. vvma 10 1000 1100 12 1200 1300 i t(av) max. average on-state current 330 (120) a 180 conduction, half sine wave @ heatsink temperature 55 (85) c double side (single side) cooled i t(rms) max. rms on-state current 610 dc @ 25 c heatsink temperature double side cooled i tsm max. peak, one half cycle, 4680 t = 10ms no voltage non-repetitive surge current 4900 a t = 8.3ms reapplied 3940 t = 10ms 100% v rrm 4120 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 110 t = 10ms no voltage initial t j = t j max 100 t = 8.3ms reapplied 77 t = 10ms 100% v rrm 71 t = 8.3ms reapplied i 2 t maximum i 2 t for fusing 1100 ka 2 s t = 0.1 to 10ms, no voltage reapplied parameter st173c..c units conditions on-state conduction ka 2 s electrical specifications voltage ratings st173c..c 40 frequency units 50hz 760 660 1200 1030 5570 4920 400hz 730 590 1260 1080 2800 2460 1000hz 600 490 1200 1030 1620 1390 a 2500hz 350 270 850 720 800 680 recovery voltage vr 50 50 50 50 50 50 voltage before turn-on vd v drm v drm v drm rise of on-state current di/dt 50 50 - - - - a/ s heatsink temperature 40 55 40 55 40 55 c equivalent values for rc circuit 47 ? / 0.22f 47 ? / 0.22f 47 ? / 0.22f i tm 180 o el 180 o el 100 s i tm i tm current carrying capability v
st173c..c series 3 bulletin i25180 rev. b 04/00 www.irf.com v tm max. peak on-state voltage 2.07 i tm = 600a, t j = t j max, t p = 10ms sine wave pulse v t(to)1 low level value of threshold voltage v t(to)2 high level value of threshold voltage r t 1 low level value of forward slope resistance r t 2 high level value of forward slope resistance i h maximum holding current 600 t j = 25 c, i t > 30a i l typical latching current 1000 t j = 25 c, v a = 12v, ra = 6 ?, i g = 1a parameter st173c..c units conditions on-state conduction 1.55 (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. 1.61 (i > x i t(av) ), t j = t j max. v 0.87 (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. 0.77 (i > x i t(av) ), t j = t j max. m ? ma di/dt max. non-repetitive rate of rise t j = t j max, v drm = rated v drm of turned-on current i tm = 2 x di/dt t j = 25 c, v dm = rated v drm , i tm = 50a dc, t p = 1s resistive load, gate pulse: 10v, 5 ? source t j = t j max, i tm = 300a, commutating di/dt = 20a/s v r = 50v, t p = 500s, dv/dt: see table in device code switching parameter st173c..c units conditions 1000 a/s t d typical delay time 1.1 min max dv/dt maximum critical rate of rise of t j = t j max. linear to 80% v drm , higher value off-state voltage available on request i rrm max. peak reverse and off-state i drm leakage current parameter st173c..c units conditions blocking 500 v/ s 40 ma t j = t j max, rated v drm /v rrm applied p gm maximum peak gate power 60 p g(av) maximum average gate power 10 i gm max. peak positive gate current 10 a t j = t j max, t p 5ms +v gm maximum peak positive gate voltage -v gm maximum peak negative gate voltage i gt max. dc gate current required to trigger v gt max. dc gate voltage required to trigger i gd max. dc gate current not to trigger 20 ma v gd max. dc gate voltage not to trigger 0.25 v triggering parameter st173c..c units conditions 20 5 vt j = t j max, t p 5ms 200 ma 3v t j = 25 c, v a = 12v, ra = 6 ? t j = t j max, rated v drm applied t q max. turn-off time 15 30 s wt j = t j max, f = 50hz, d% = 50
st173c..c series 4 bulletin i25180 rev. b 04/00 www.irf.com t j max. operating temperature range -40 to 125 t stg max. storage temperature range -40 to 150 r thj-hs max. thermal resistance, 0.17 dc operation single side cooled junction to heatsink 0.08 dc operation double side cooled r thc-hs max. thermal resistance, 0.033 dc operation single side cooled case to heatsink 0.017 dc operation double side cooled f mounting force, 10% 4900 n (500) (kg) wt approximate weight 50 g parameter st173c..c units conditions k/w thermal and mechanical specification c case style to - 200ab (a-puk) see outline table k/w ? r thj-hs conduction (the following table shows the increment of thermal resistence r thj-hs when devices operate at different conduction angles than dc) single side double side single side double side 180 0.015 0.016 0.011 0.011 120 0.018 0.019 0.019 0.019 90 0.024 0.024 0.026 0.026 k/w t j = t j max. 60 0.035 0.035 0.036 0.037 30 0.060 0.060 0.060 0.061 sinusoidal conduction rectangular conduction conduction angle units conditions ordering information table 5 68 9 st 17 3 c 12 c h k 1 3 4 10 7 device code 12 1 - thyristor 2 - essential part number 3 - 3 = fast turn off 4 - c = ceramic puk 5 - voltage code: code x 100 = v rrm (see voltage rating table) 6 - c = puk case to-200ab (a-puk) 7 - reapplied dv/dt code (for t q test condition) 8 -t q code 9 - 0 = eyelet term. (gate and aux. cathode unsoldered leads) 1 = fast-on term. (gate and aux. cathode unsoldered leads) 2 = eyelet term. (gate and aux. cathode soldered leads) 3 = fast-on term. (gate and aux. cathode soldered leads) - critical dv/dt: none = 500v/sec (standard value) l = 1000v/sec (special selection) 10 t q (s) dv/dt - t q combinations available dv/dt (v/s) 20 50 100 200 400 15 cl -- -- -- -- 18 cp dp ep fp * -- 20 ck dk ek fk * hk 25 cj dj ej fj hj 30 -- dh eh fh hh * standard part number. all other types available only on request.
st173c..c series 5 bulletin i25180 rev. b 04/00 www.irf.com fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics 40 50 60 70 80 90 100 110 120 130 0 40 80 120 160 200 240 30 60 90 120 180 average on-state current (a) conduction angle maximum allowable heatsink temperature (c) st173c..c series (single side cooled) r (d c) = 0.17 k/w th j-hs 20 30 40 50 60 70 80 90 100 110 120 130 0 50 1 00 15 0 2 0 0 25 0 30 0 35 0 dc 30 60 90 120 180 average on -state c urren t (a) conduction period maximum allowable heatsink temperature ( c) st 173c ..c series (single side c oo le d) r (d c ) = 0.17 k/w thj-hs outline table case style to-200ab (a-puk) all dimensions in millimeters (inches) dia. max. 4.75 (0.19) 28 (1.10) 6.5 (0.26) 19 (0.75) 0.3 (0.01) min. 0.3 (0.01) min. 13.7 / 14.4 (0.54 / 0.57) 25 5 gate term. for 1.47 (0.06) dia. pin receptacle anode to gate creepage distance: 7.62 (0.30) min. strike distance: 7.12 (0.28) min. 19 (0.75) dia. max. 38 (1.50) dia max. 2 holes 3.56 (0.14) x 1.83 (0.07) min. deep 42 (1.65) max. quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification)
st173c..c series 6 bulletin i25180 rev. b 04/00 www.irf.com fig. 7 - maximum non-repetitive surge current single and double side cooled fig. 8 - maximum non-repetitive surge current single and double side cooled fig. 5 - on-state power loss characteristics fig. 6 - on-state power loss characteristics fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics 20 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 700 dc 30 60 90 120 180 average o n-state c urrent (a) conduction period maximum allowable heatsink temperature ( c) st173c..c se ries (d ouble side c o ole d) r (d c ) = 0.08 k/w th j- hs 30 40 50 60 70 80 90 100 110 120 130 0 50 1 00 15 0 2 0 0 2 50 3 00 35 0 40 0 30 60 90 120 18 0 average on-state current (a) conduction angle maxim um allowable heatsink temperature ( c) st 173c ..c se rie s (d ouble side c oole d) r (d c ) = 0.08 k/w thj-h s 0 200 400 600 800 1000 1200 1400 0 100 200 300 400 500 600 700 dc 180 120 90 60 30 rms lim it cond uction period maximum average on-state power loss (w) a ve ra g e o n -sta te curre nt (a ) st173c ..c series t = 125 c j 0 10 0 20 0 30 0 40 0 50 0 60 0 70 0 80 0 90 0 1000 0 50 100 150 200 250 300 350 400 450 180 120 90 60 30 rms lim it cond uction angle maximum average on-state power loss (w) a vera g e o n -sta te curre nt (a ) st173c ..c se ries t = 125 c j 2000 2500 3000 3500 4000 4500 110100 number of equal amplitude half cycle current pulses (n) at any rated load condition and with rated v applied following surge. rrm peak half sine w ave o n-state current (a) in it i a l t = 1 2 5 c @ 60 hz 0.0 083 s @ 50 hz 0.0 100 s j st173c ..c series 1500 2000 2500 3000 3500 4000 4500 5000 0.01 0.1 1 p u ls e t ra i n d u ra ti o n ( s ) ve rsus p ulse tra in d ura tion. co ntro l of c on duction m ay not be m aintain ed. peak half sine wave o n-state current (a) in it i a l t = 1 2 5 c no voltage reapplied rate d v reapplied rrm j st173 c..c series m a x im um n on re p etitive s urg e curre nt
st173c..c series 7 bulletin i25180 rev. b 04/00 www.irf.com fig. 9 - on-state voltage drop characteristics fig. 10 - thermal impedance z thj-hs characteristics fig. 11 - reverse recovered charge characteristics fig. 12 - reverse recovery current characteristics fig. 13 - frequency characteristics 100 1000 10000 11.522.533.544.5 t = 25 c in stantaneous o n-state curren t (a) instantan eous on -state voltage (v) t = 125 c j st173c ..c series j 0 50 100 150 200 250 0 20406080100 i = 5 00 a 300 a 200 a 10 0 a 50 a rate of fall of on-state current - di/dt (a/s) maximum reverse recovery ch arge - qrr (c) st173 c ..c ser ies t = 125 c j tm 0.001 0.0 1 0.1 1 0.001 0.01 0.1 1 10 square w ave pulse d uratio n (s) thj-hs transien t therm al im pe danc e z (k/w ) st173 c..c se ries steady state value r = 0.17 k/w (sin gle side c ooled) r = 0.08 k/w (double side cooled) (d c o pe ratio n) th j- hs th j- hs 1e2 1e3 1e4 1e11e21e31e4 50 hz 400 2500 100 pulse ba se w id th (s) p e a k o n-sta te c urrent (a) 100 0 1500 3 000 200 500 5000 st173c..c series s inus o id a l p ul se t = 40 c c snubber circuit r = 47 oh m s c = 0.22 f v = 80% v s s d dr m tp 1e4 1e1 1e2 1e3 1e4 50 hz 40 0 2500 10 0 pulse b a sew id th (s) 10 00 1500 3000 20 0 50 0 5000 st1 73c ..c serie s sinusoidal pulse t = 55 c c snub ber circuit r = 47 ohm s c = 0 .22 f v = 8 0% v s s d drm tp 1e 1 0 20 40 60 80 100 120 140 160 0 204060 80100 m a xim um rev erse re cov ery c urrent - irr (a ) ra te o f fa ll o f f orw a rd c urren t - d i/d t (a /s) i = 5 00 a 30 0 a 200 a 100 a 50 a st173c..c series t = 125 c j tm
st173c..c series 8 bulletin i25180 rev. b 04/00 www.irf.com fig. 16 - maximum on-state energy power loss characteristics fig. 15 - frequency characteristics fig. 14 - frequency characteristics 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e 4 50 hz 400 2500 10 0 pulse b a sew id th (s) peak on-state c urrent (a) 10 00 15 00 3000 20 0 500 5 000 st17 3c ..c se ries tra p e zoi d a l p uls e t = 40 c di/dt = 100a/s c snubber circuit r = 4 7 o hm s c = 0 .22 f v = 8 0% v s s d drm tp 10 00 0 1e4 1e1 1 e2 1e 3 1e4 50 hz 40 0 2500 100 pulse b ase w id th (s) 1 000 1500 20 0 500 st173c..c series tra p ezo id a l p u ls e t = 55 c di/dt = 10 0a /s c 3000 s nub b e r c i rc uit r = 47 o hm s c = 0 .22 f v = 8 0% v s s d drm tp 5000 10 00 0 1e1 1e1 1e2 1e3 1e4 50 hz 400 2500 100 pulse b a sew idth (s) 10 00 1500 2000 200 500 st173c..c se ries tra p ezo i d a l p uls e t = 5 5 c di/dt = 50a/s c snub ber circuit r = 47 o hm s c = 0 .22 f v = 8 0% v s s d drm tp 3000 5000 1e1 1e2 1e3 1e4 1e11e21e31e4 50 hz 400 2500 100 1000 1500 2000 30 00 200 50 0 pulse b a sew id th (s) p ea k o n-state c urrent (a) st173c..c se ries tra p ezo i d a l p uls e t = 40 c di/dt = 50a/s c snubber circuit r = 47 o hm s c = 0 .22 f v = 8 0% v s s d drm tp 5000 1e4 1e1 1e2 1e3 1e4 pulse ba sew id th (s) 20 joules per pulse 1 0.5 0.3 0.2 0.1 st1 73 c..c serie s recta ngular pulse di/d t = 50a/s 10 5 3 tp 2 1e1 1e1 1e2 1e3 1e4 1e5 1e 1 1 e2 1e3 1e 4 pulse basewidth (s) 20 joule s pe r p ulse 2 1 0.5 0.3 0.2 0.1 10 5 pea k on-state c urrent (a) 3 st17 3c ..c serie s s i nuso i d a l p uls e tp 1e4
st173c..c series 9 bulletin i25180 rev. b 04/00 www.irf.com fig. 17 - gate characteristics 0.1 1 10 100 0.0 01 0.0 1 0.1 1 1 0 1 00 vgd ig d (b) (a ) tj=25 c tj=1 25 c tj=-40 c (1) (2) insta nta neous g a te curren t (a) insta nta neo us g a te vo ltag e (v) re c ta ng ula r ga te p ulse a) recomm ended load line for b ) r e c o m m e n d e d lo a d li n e fo r <=30% rated di/dt : 10v, 10ohm s rate d di/dt : 20v, 10 ohm s; tr<=1 s tr<=1 s (1) pg m = 10 w, tp = 20m s (2) pg m = 20 w, tp = 10m s (3) pg m = 40 w , tp = 5m s (4) pg m = 60 w, tp = 3.3m s (3) d evice : st173c ..c series fre quenc y lim ite d by pg (a v ) (4)
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